1gb_nand_spi_m68a.pdfVIP

NAND Flash Memory Serial Peripheral Interface (SPI) MT29F1G01AAADD Features ? Single-level cell (SLC) technology ? Organization – Page size x1: 2112 bytes (2048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes with 512 blocks – Device size: 1Gb: 1024 blocks ? Data retention: 10 years ? New commands – PAGE READ in x2 mode – PAGE READ in x4 mode Options ? Density: 1Gb (single die) ? Operating temperature – Commercial (0°C to +70°C) – Industrial (–40°C to +85°C) ? Package – 63-ball VFBGA, lead-free, (9mm x 11mm) Table 1: NAND Flash SPI Parameters Parameters Value VCC range 2.7–3.6V Frequency 50 MHz Transfer rate 20ns Loading throughput 50 MT/s tBERS (BLOCK ERASE) 700μs (TYP) tPROG (PAGE PROGRAM) 220μs (TYP) tRD (PAGE READ) 70μs (MAX) Internal ECC correction 4-bit Width x1, x2, x4 Micron Confidential and Proprietary Advance? 1Gb x1: SPI NAND Flash Memory Features PDF: 09005aef84011d85 1gb_nand_spi_m68a.pdf – Rev. K 7/14 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. ? 2013 Micron Technology, Inc. All rights reserved. ?Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Microns production data sheet specifications. Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at . To compare features and specifications by device type, visit /products. Contact the factory for devices not found. Figure 1: Part Number Chart MT 29F 1G 01 A A A D D H4 IT ES :D Micron Technology Product Family 29F = NAND Flash memory Density 1G = 1Gb Device Width 01 = 1-bit Level A = SLC Classification Mark Die nCE RnB I/O Channels A 1 0 0 1 Operating Voltage Range A = 3.3V (2.7–3.6V) Generation Feature Set D = Fourth set of device features Des