Ohmic-like contact formation at the rear interface between Cu(In,Ga)Se2 and ZnOAl in a lift-off Cu(In,Ga)Se2 solar cell.pdfVIP

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Ohmic-like contact formation at the rear interface between Cu(In,Ga)Se2 and ZnOAl in a lift-off Cu(In,Ga)Se2 solar cell.pdf

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Ohmic-like contact formation at the rear interface between Cu(In,Ga)Se2 and ZnOAl in a lift-off Cu(In,Ga)Se2 solar cell.pdf

Thin Solid Films 616 (2016) 17–22 Contents lists available at ScienceDirect Thin Solid Films journal homepage: /locate/tsf Ohmic-like contact formation at the rear interface between Cu(In,Ga)Se2 and ZnO:Al in a lift-off Cu(In,Ga)Se2 solar cell Jakapan Chantana ?, Hiroyuki Arai, Yutaka Niizawa, Takashi Minemoto Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan article info Article history: Received 12 February 2016 Received in revised form 26 July 2016 Accepted 28 July 2016 Available online 30 July 2016 Keywords: Copper indium gallium selenide Lift-off solar cells Ohmic-like contact Trap-assisted tunneling recombination Bi-layers of back electrode abstract A lift-off Cu(In,Ga)Se2 (CIGS) solar cell, which could serve as the top solar cell in a tandem-type solar cell, was fabricated with a superstrate-type structure consisting of soda-lime glass (SLG)/epoxy/Al/n-type ZnO:Al (AZO)/ZnO/CdS/p-type CIGS/n-type AZO (back electrode)/Al. This study proposes a method of realizing the ohmic-like contact between p-type CIGS and n-type AZO in a lift-off CIGS solar cell to improve the conversion ef?ciency (η). The sputtering conditions under which the n-type AZO layer was deposited, speci?cally the sample position and radio frequency (RF) power density, were optimized to form ohmic-like contact through trapassisted tunneling recombination. The sputtering damage near the CIGS surface that induced the trap-assisted tunneling recombination was evaluated by examining the photoluminescence peak intensity. Ultimately, ohmic-like characteristics were attained for the p-type CIGS/n-type AZO interface under optimal AZO deposition conditions, with the sample positioned 0 cm from the AZO target center and an RF power density of 2.4 W/cm2. The proposed method was successfully applied to the fabrication of a lift-off CIGS solar cell. Consequently, an η value of 9.2% was obtained for the lift-off CIGS solar cell, which is 70% that of a s