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n-Type polysilicon passivating contact for industrial bifacial n-type solar cells.pdf

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n-Type polysilicon passivating contact for industrial bifacial n-type solar cells.pdf

Solar Energy Materials Solar Cells 158 (2016) 24–28 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat n-Type polysilicon passivating contact for industrial bifacial n-type solar cells M.K. Stodolny a,n, M. Lenes b, Y. Wu a, G.J.M. Janssen a, I.G. Romijn a, J.R.M. Luchies b, L.J. Geerligs a a ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands b Tempress Systems, Radeweg 31, 8171 MD Vaassen, The Netherlands article info Article history: Received 25 March 2016 Received in revised form 13 June 2016 Accepted 14 June 2016 Available online 7 July 2016 Keywords: Polysilicon Passivating contact Carrier selective contact LPCVD n-type solar cell Bifacial abstract We present a high-performance bifacial n-type solar cell with LPCVD nt polysilicon (polySi) back side passivating contacts and ?re-through screen-printed metallization, processed on full area 6″ Cz wafers. The cells were manufactured with low-cost industrial process steps yielding a best ef?ciency of 20.7%, and an average Voc of 674 mV. We analysed effects of variation of doping level, thickness, and oxide properties of the n-type polySi/SiOx layers, as well as hydrogenation from a PECVD SiNx:H coating, which led to recombination current densities down to $ 2 fA/cm2 and $ 4 fA/cm2 on planar and textured surface, respectively. Analysis shows that the wafer bulk lifetime in the cell is high and that the Voc of the cell is limited by the Jo of the uniform diffused boron emitter and its contacts. Ways to improve the ef?ciency of the cell to 422% are indicated. 2016 Elsevier B.V. All rights reserved. 1. Introduction The combination of a thin oxide (SiOx) and doped polysilicon (polySi) to obtain low recombination junctions, originating from early work on bipolar transistors [1], was demonstrated in the 1990s to be a viable candidate for creating passivating contacts to crystalline silicon (cSi) solar cells [2,3]. The interfacial thin oxide with dop