Application of a-Siμc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells.pdfVIP

Application of a-Siμc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells.pdf

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Application of a-Siμc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells.pdf

Solar Energy 144 (2017) 735–739 Contents lists available at ScienceDirect Solar Energy journal homepage: /locate/solener Application of a-Si/lc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells Ke Tao a, Qiang Li a, Caixia Hou a, Shuai Jiang a, Jin Wang b, Rui Jia a,?, Yun Sun a, Yongtao Li a, Zhi Jin a, Xinyu Liu a a Institute of Microelectronics, Chinese Academy of Sciences, 3# Bei-Tu-Cheng West Road, Beijing 100029, China b College of Electronic Information and Optical Engineering, Nankai University, #94 Weijin Road, Tianjin 300071, China article info Article history: Received 30 September 2016 Received in revised form 21 January 2017 Accepted 26 January 2017 Keywords: Tunel oxide passivated contact a-Si lc-Si Passivation Ntype silicon solar cells abstract This paper presents our research on the TOP-Con silicon solar cells, which focuses on the passivated contacts based on a thin tunneling oxide layer and a silicon thin ?lm. The in?uence of the microstructure of silicon thin ?lm on the passivation property was studied. The experimental results indicated that the tun- nel oxide combined with a-Si:H featured a good passivation property compared to the lc-Si:H. whereas, the annealed lc-Si:H led to a high fraction of crystallization, and no blistering was observed. A hybrid structure containing a-Si/lc-Si:H thin ?lms was suggested to improve both the passivation and contact properties. The effective carrier lifetime of 3.2 ms and implied Voc of 716 mV were achieved with symmetric structure on n-type Cz substrate, indicating that our tunnel oxide/n+ hybrid-Si provides excellent passivation. The performance of TOP-Con solar cells with hybrid layer at the rear contact has been dras- tically improved compared to that of cells with lc-Si layer. Although a relatively low ef?ciency of 15.09% was achieved due to the poor passivation at the front surface, simulations indicated that the conversion ef?ciency of solar cells can be easily increased to

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