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A comparative study of Mg and Pt contacts on semi-insulating GaAs Electrical and XPS characterization.pdf

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A comparative study of Mg and Pt contacts on semi-insulating GaAs Electrical and XPS characterization.pdf

Applied Surface Science 395 (2017) 131–135 Contents lists available at ScienceDirect Applied Surface Science journal homepage: /locate/apsusc A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization F. Dubecky′ a,?, D. Kindl b, P. Hubík b, M. Micˇusˇík c, M. Dubecky′ d, P. Bohácˇek a, G. Vanko a, E. Gombia e, V. Necˇas f, J. Mudronˇ g a Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104, Slovakia b Institute of Physics CAS, v.v.i., Cukrovarnická 10, CZ-16200 Prague, Czech Republic c Polymer Institute, SAS, Dúbravská cesta 9, Bratislava, SK-84541, Slovakia d Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1, Czech Republic e IMEM-CNR, Parco area delle Scienze 37/A, Parma, I-43010, Italy f Faculty of Electrical Engineering and Information Technology, SUT, Ilkovicˇova 3, Bratislava, SK-81219, Slovakia g Department of Electronics, Academy of Armed Forces, Dem?nová 393, Liptovsky′ Mikulásˇ, SK-03106, Slovakia article info Article history: Received 29 February 2016 Accepted 27 April 2016 Available online 30 April 2016 Keywords: Semi-insulating GaAs Metal-semiconductor M-S contact Interface Work function Electrical charge transport XPS abstract We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a signi?cant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an