2014集成电路.docVIP

半导体工艺期末作业 关于CMOS参数修改的影响 原程序 go athena # line x loc=0.0 spac=0.1 line x loc=0.2 spac=0.006 line x loc=0.4 spac=0.006 line x loc=0.6 spac=0.01 # line y loc=0.0 spac=0.002 line y loc=0.2 spac=0.005 line y loc=0.5 spac=0.05 line y loc=0.8 spac=0.15 # init orientation=100 c.phos=1e14 space.mul=2 #pwell formation including masking off of the nwell # diffus time=30 temp=1000 dryo2 press=1.00 hcl=3 # etch oxide thick=0.02 # #P-well Implant # implant boron dose=8e12 energy=100 pears # diffus temp=950 time=100 weto2 hcl=3 # #N-well implant not shown - # # welldrive starts here diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3 # diffus time=220 temp=1200 nitro press=1 # diffus time=90 temp=1200 t.rate=-4.444 nitro press=1 # etch oxide all # #sacrificial cleaning oxide diffus time=20 temp=1000 dryo2 press=1 hcl=3 # etch oxide all # #gate oxide grown here:- diffus time=11 temp=925 dryo2 press=1.00 hcl=3 # # Extract a design parameter extract name=gateox thickness oxide mat.occno=1 x.val=0.05 # #vt adjust implant implant boron dose=9.5e11 energy=10 pearson # depo poly thick=0.2 divi=10 # #from now on the situation is 2-D # etch poly left p1.x=0.35 # method fermi compress diffuse time=3 temp=900 weto2 press=1.0 # implant phosphor dose=3.0e13 energy=20 pearson # depo oxide thick=0.120 divisions=8 # etch oxide dry thick=0.120 # implant arsenic dose=5.0e15 energy=50 pearson # method fermi compress diffuse time=1 temp=900 nitro press=1.0 # # pattern s/d contact metal etch oxide left p1.x=0.2 deposit alumin thick=0.03 divi=2 etch alumin right p1.x=0.18 # Extract design parameters # extract final S/D Xj extract name=nxj xj silicon mat.occno=1 x.val=0.1 junc.occno=1 # extract the N++ regions sheet resistance extract name=n++ sheet rho sheet.res material=Silicon mat.occno=1 x.val=0.05 region.occno=1 # extract the sheet rho under the spacer, of the LDD region extract name=ldd sheet rho sheet.res material=Silicon \ mat.occno=1 x.val=0.3 region.oc