锗浓缩法制备较高张应变锗的发光性质精讲.pptVIP

Room temperature photoluminescence from tensile-strained GOI fabricated by a Ge condensation technique Shihao Huang, Weifang Lu, Cheng Li, Wei Huang, Hongkai Lai, and Songyan Chen Department of Physics, Semiconductor Photonics Research Center, Xiamen University * * Outline 2、Tensile-strained GOI fabrication 3、Properties of GOI 4、Conclusion 1、Introduction 1、Introduction J.Liu, et al, MIT, Optics Letters, 35(5):679-681, 2010 Direct Gap Optical Gain from Ge-on-Si Tensile strain transform Ge into direct band gap meterial X. Sun, Ge-on-Si Light-Emitting Materials and Devices for Silicon Photonics 1、Introduction Methods to apply a tensile strain to Ge 1.Difference of thermal coefficients between Ge and Si = 0.25% 2.Ge photonic wire grown on GaAs sub. = 0.40% 3.Mechanical stress on Ge = 1.13% 4.GOI sub. made by layer transfer technique = 0.19% 5.Our strategy to fabricate ultra-thin GOI by Ge condensation = 0.60% 2、 Tensile-strained GOI fabrication 2、Tensile-strained GOI fabrication SiO2 Ge Si BOX Si3N4 Si3N4 oxide SiO2 Ge Si BOX SiGe Si Si Si cap BOX Si3N4 Si3N4 Sample B Sample A SiGe Si Si Si cap BOX oxide SiGe Si Si Si cap BOX Si Top Si (38 nm) BOX epitaxy 32 μm Top view 2、Tensile-strained GOI fabrication Ge condensation process SixGe1-x Si cap Si buffer top Si BOX Si SiO2 SixGe1-x BOX Si Ge Ge SiO2 BOX Si oxide oxide Ge condensation Selective oxide 2、Tensile-strained GOI fabrication 1300 1030 760 40 490 220 20 190 T/℃ 1150 900 A0 0.5h 2.5h 4.5h 4.5h 4.5h 4.5h 9cycles 9cycles 9cycles 9cycles 20min 20min A1 A2 A3 A4 Oxidize 10min Remove by about 260nm SiO2 t/min. Annealing 20min Condensation processes Raman spectroscopy indicated that ultra-thin GOI were achieved. 2、Tensile-strained GOI fabrication Tf=Ti-0.46T0 Xf=Xi Ti/Tf The amount of Ge is conserved before and after the oxidation. The SiGe laye