《instability in circuit simulations》.pdfVIP

Atomistic approach to variability of bias-temperature instability in circuit simulations 1 1,2 1,3 1,4 1 5 B. Kaczer , S. Mahato , V. Valduga de Almeida Camargo , M. Toledano-Luque , Ph. J. Roussel , T. Grasser , F. Catthoor1,6 1 1 3 1,6 , P. Dobrovolny , P. Zuber , G. Wirth , G. Groeseneken 1imec, Kapeldreef 75, B-3001 Leuven, Belgium 2TU Munich, Germany NTU, Singapore 3UFRGS, Brazil 4UC Madrid, Spain 5TU Wien, Austria 6KU Leuven, Belgium phone: +32 16-281-557, e-mail: kaczer@imec.be Abstract—A blueprint for an atomistic approach to introducing II. PROBLEM STATEMENT time-dependent variability into a circuit simulator in a realistic manner is demonstrated. The approach is based on previously Large devices employed in the past technologies were proven physics of stochastic properties of individual gate oxide assumed to behave identically during BTI stress. defects and their impact on FET operation. The proposed Consequently, one device was typically sufficient to project a framework is capable of following