《高效太阳能电池---Al2O3钝化.》.pdfVIP

Presented at the 35th PVSC, June 20-25, 2010, Honolulu, Hawaii Effect of a post-deposition anneal on Al O /Si interface properties 2 3 1 1 3 2 2 2 2 1 1 J. Benick , A. Richter , T. T. A. Li , N. E. Grant , K. R. McIntosh , Y. Ren , K. J. Weber , M. Hermle , S. W. Glunz 1 Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg, Germany 2 Centre for Sustainable Energy Systems, The Australian National University, Canberra, ACT 0200, Australia 3 School of Engineering, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT Particularly a very high density of fixed negative charges, 13 -3 Qf , (up to -10 cm ) is one of the special characteristics of While Al O has been proven to provide an excellent level the Al O . However, to be able to reach a high level of 2 3 2 3 of surface passivation on all sorts of p-type doped silicon surface passivation as is reported for Al O , in addition to 2 3 surfaces, the passivation mechanism of this layer and an