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LARGE-SCALE DISLOCATION DYNAMICS SIMULATIONS for COMPUTATIONAL DESIGN OF SEMICONDUCTOR THIN FILM SYSTEMS Principal Investigator: Nasr M. Ghoniem (UCLA) Collaborator: Lizhi Z. Sun (Univ. of Iowa) NSF Grant: DMR-0113555 University of Illinois June 17-19, 2004 1 Project Objectives Project Objectives ¬ (1) Investigate single and collective dislocation interaction phenomena in anisotropic materials, which determine plasticity and failure of semiconductor devices. ¬ (2) Multiscale coupling of the parametric dislocation dynamics with the finite element ¬ (3) Develop unique software on parallel, scaleable computer clusters to simulate the collective behavior of topologically complex line defects. ¬ (4) Apply the developed software to investigate key dislocation mechanisms. ¬ (5) Large-scale simulation and optimization of semiconductor material systems. 2 Motivation: FEM+DD Superposition is Difficult Many Thin Film Applications Require Mutilayers of Anisotropic 10a from z = 10000a boundary Materials (Poly, or single crystal) scale factor = 1 50a from z = 10000a
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