Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1 xGex substrate》.pdfVIP

Microelectronic Engineering 149 (2016) 46–51 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: /locate/mee Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1 − xGex substrate Antony Premkumar Peter ⁎, Thomas Witters, Shibesh Dutta, Andriy Hikavvy, Inge Vaesen, Sven Van Elshocht, Marc Schaekers Imec, Kapeldreef 75, B-3001 Leuven, Belgium a r t i c l e i n f o a b s t r a c t Article history: The products of the solid state reaction involving ultra-thin Ni film (6 nm) and Si1 − xGex layers (Ge 25 and 55 Received 27 May 2014 at.%), were analysed using sheet resistance (Rs), glancing angle X-ray diffraction (GIXRD), scanning electron Received in revised form 22 May 2015 and atomic force microscopy (SEM, AFM) techniques. The reaction was carried out via rapid thermal process Accepted 22 September 2015 (RTP) annealing using two different steps (RTP1 and RTP2) while applying a selective etch (SE) in between Available online 25 September 2015 them. The intermediate and the end reaction products resulting after RTP1 and RTP2 were found to be dependent on the Ge content, forming Ni-rich silicide (Ni Si) and NiSi on Si Ge , while Ni-rich germanide (Ni Ge ) and Keywords: 2 75 25 5 3 Ni Ni