Growth and characterization of Cu2ZnSn(Sx Se1x)4 single crystal grown by traveling heater method》.pdfVIP

Journal of Crystal Growth 423 (2015) 9 –15 Contents lists available at ScienceDirect Journal of Crystal Growth journal homepage: /locate/jcrysgro Growth and characterization of Cu ZnSn(S Se ) single crystal 2 x 1 x 4 grown by traveling heater method Akira Nagaoka a,f, Ryoji Katsube a, Shigeru Nakatsuka a, Kenji Yoshino b,n, Tomoyasu Taniyama c, Hideto Miyake d, Koichi Kakimoto e, f a Michael A. Scarpulla , Yoshitaro Nose a Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan b Department of Applied Physics and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan c Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan d Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan e Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580, Japan f Materials Science and Electrical Engineering Departments, University of Utah, Salt Lake City 84112, USA a r t i c l e i n f o a b s t r a c t Article history: High-quality Cu ZnSn(S Se ) (CZTS Se ) single crystals were grown by the traveling heater method 2 x 1 x 4 x 1 x Received 10 March 2015 (THM), which is an example of a solution growth process. The CZTSx Se1 x solute–Sn solvent Received in revised form pseudobi