Existence of transient temperature spike induced by SHI evidence by ion beam analysis》.pdfVIP

Nuclear Instruments and Methods in Physics Research B 219–220 (2004) 206–214 /locate/nimb Existence of transient temperature spike induced by SHI: evidence by ion beam analysis D.K. Avasthi a, , S. Ghosh b, S.K. Srivastava c, W. Assmann d a Nuclear Science Centre, Aruna Asaf Ali Road, P.O. Box 10502, JNU Campus, New Delhi 110067, India b Belonia College, Belonia, South Tripura 799 155, India c € Max-Plank-Institut fur Metallforschung, 70569 Stuttgart, Germany d € Ludwig Maximilians University, Munchen, 85748 Garching, Germany Abstract The passage of high-energy heavy ions (swift heavy ions or SHI) through insulators and certain other materials creates extensive defects along the ion path beyond certain threshold of electronic energy loss. Such columnar defects are explainable by Coulomb explosion or by thermal spike. We have carried out couple of experiments in oxide materials, fullerene thin films and metal systems, which give an indirect evidence of the existence of transient tem- perature spike. The on-line ERDA analysis is performed (i) to measure electronic sputtering of thin films by measuring the loss of material with the fluence and (ii) to quantify interface modification by quantifying the changes at the interface with fluence. The observations in electronic sputtering were qualitatively explainable by the thermal spike model. Interface modification was quantitatively explained to be due to the diffusion of species during the