硅基氮化铝薄膜的AFM和XPS分析.pdfVIP

29 6 Vol. 29 No . 6 200712 PIEZOELECT ECT RICS ACOUST OOPT ICS D c. 2007 : 2007) AFM XPS 刘 文, 王质武, 杨清斗, 卫静婷 ( , , , 518060) : Si( 111) ( AlN) , X, , X, AlN ( 100) , 0. 30. 23 nm, 0. 30 nm, z 3. 25 nm AlNOC , CO , AlN Al N , AlN : ; ; ; X; : O484 : A AFM and XPSAnalysis of the AlN Thin Film on the Si Substrate LIUWen, WANGZhi u, YANG Qingdou,WEI Jingting ( Institut of Opto l ctronics, Sh nzh n U niv rsity,K y L ab. of Opto l ctronic D vic s and Syst ms, Guangdong Provic , K y Lab. of Opto l ctronic D vic s and Syst ms, Ministry of E du cation, Sh nzh n 518060, Ch ina) Abstract: Aluminum nitrid thin film has b n d posit d on Si( 111) subst rat by using a DC magn tron sputt ring sy st m. Th crystallin structur and ori ntation of t h AlN film w r studi d by Xray diff raction ( XRD) . Surfac morphology of th film w as obs rv d by atomic forc microscopy ( AFM) . Th surfac composit ions and ch mical nvironm nts of th film w r charact riz d by Xray photo l ctron sp ctroscopy ( XPS) . T h film shows a x c ll nt pr f rr d ori ntation of ( 100) and its FW H M is 0. 3. Surfac roughn ss param t rs w r R a = 0. 23 nm, RM S = 0. 30 nm and R = 3. 25 nm. XPS data show that AlNCO l m nt s w r xist d on th surfac of th AlN z film. C1s and O1s binding n rgy indicat that th tw o l m nts mainly xist d by physically adsorb d. Al and N 2p 1s binding n rgy prov th format ion of th AlN film. Th XPS d pth profil analysis indicat s that th film pr s nt a composition highly clos to AlN st oichiom t ric. Key ords:aluminum nitrid ; DC magn tron sputt ring syst