北京2025自考[大功率半导体科学]英语二考前冲刺练习题.docxVIP

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北京2025自考[大功率半导体科学]英语（二）考前冲刺练习题

一、选择题（每题1分，共20分）

共20题

1.Whatistheprimaryadvantageofsiliconcarbide(SiC)oversilicon(Si)inpowerelectronics?

A)Lowercost

B)Highercriticalbreakdownfield

C)Betterthermalconductivity

D)Simplermanufacturingprocess

2.WhichofthefollowingisakeymaterialforGalliumNitride(GaN)basedpowerdevices?

A)Germanium(Ge)

B)IndiumPhosphide(InP)

C)GalliumArsenide(GaAs)

D)GalliumNitride(GaN)

3.InpowerMOSFETs,thetermdrain-sourceon-resistance(Rds(on))refersto:

A)Resistanceduringturn-off

B)Resistanceduringturn-on

C)Leakageresistance

D)Outputcapacitance

4.Whichtypeofpowerdeviceistypicallyusedinhigh-frequencyswitchingapplications?

A)Diode

B)IGBT

C)MOSFET

D)Thyristor

5.Thetermthermalrunawayinpowerdevicesrefersto:

A)Normaltemperatureriseduringoperation

B)Uncontrolledincreaseintemperatureleadingtofailure

C)Efficientheatdissipation

D)Reducedthermalresistance

6.WhatisthefunctionofagateresistorinMOSFETs?

A)Toincreaseswitchingspeed

B)Tolimitgatecurrent

C)Toimproveefficiency

D)Toreducepowerloss

7.Whichofthefollowingisacommoncoolingmethodforhigh-powersemiconductors?

A)Aircoolingonly

B)Liquidcoolingonly

C)Heatsinkscombinedwithforcedaircooling

D)Naturalconvectiononly

8.TheparasiticthyristoreffectinMOSFETsiscausedby:

A)Gate-sourcecapacitance

B)Drain-sourceleakage

C)Reverse-biasedjunctions

D)Forward-biasedjunctions

9.WhatisthetypicalvoltageratingofSiCpowerdevices?

A)Below600V

B)600V–1200V

C)Above1200V

D)Below300V

10.WhichofthefollowingisamajorchallengeinGaN-basedpowerelectronics?

A)Highswitchingfrequency

B)Lowthermalconductivity

C)Highon-resistance

D)Largemarketadoption

11.Thetermsoftrecoveryindiodesrefersto:

A)Fastrecoverytime

B)Slowrecoverytime

C)Zerorecoverytime

D)Highrecoveryenergy

12.Whatistheprimarybenefi