江西2025自考[大功率半导体科学]英语二易错题专练.docxVIP

第PAGE页共NUMPAGES页

江西2025自考[大功率半导体科学]英语（二）易错题专练

一、选择题（每题2分，共20题）

说明：下列选项中只有一项是正确的，请选出并填涂答题卡。

1.Whichofthefollowingmaterialsiscommonlyusedinhigh-powersemiconductordevicesduetoitshighthermalconductivityandlowresistivity?

A.Siliconcarbide(SiC)

B.Galliumarsenide(GaAs)

C.Germanium(Ge)

D.Silicondioxide(SiO?)

2.Inthecontextofhigh-powersemiconductordevices,whatistheprimaryfunctionofaheatsink?

A.Toincreasethedeviceselectricalresistance

B.Toenhancethedevicesswitchingspeed

C.Todissipateexcessheatgeneratedduringoperation

D.Toreducethedevicesbreakdownvoltage

3.WhichtypeofMOSFETistypicallyusedinhigh-powerapplicationsduetoitshighcurrent-carryingcapacity?

A.NMOSFET

B.PMOSFET

C.LDMOS(LaterallyDiffusedMOSFET)

D.CMOS(ComplementaryMetal-Oxide-Semiconductor)

4.Whatisthemainadvantageofsiliconcarbide(SiC)oversilicon(Si)inhigh-powersemiconductordevices?

A.Lowercost

B.Higherbreakdownvoltageandbetterthermalconductivity

C.Simplerfabricationprocess

D.Higherbandgapenergy

5.Inathyristor,howmanyPNjunctionsaretypicallypresent?

A.1

B.2

C.3

D.4

6.Whatistheprimarypurposeofagatedriverinhigh-powersemiconductorcircuits?

A.Toreducethedevicespowerconsumption

B.Tocontrolthegate-sourcevoltageofthedevice

C.Toincreasethedevicesbreakdownvoltage

D.Tominimizethedevicesthermalresistance

7.Whichofthefollowingisacommonissueinhigh-powersemiconductordevicesduetohighcurrentflow?

A.Reducedswitchingspeed

B.Increasedgatecapacitance

C.Thermalrunaway

D.Lowerbreakdownvoltage

8.Whatisthetypicalvalueofthebreakdownvoltagefora600VMOSFETusedinhigh-powerapplications?

A.300V

B.600V

C.1200V

D.1500V

9.Whichparameteriscriticalforevaluatingtheefficiencyofahigh-powersemiconductordevice?

A.Gateleakagecurrent

B.On-stateresistance(Rds(on))

C.Gatethresholdvoltage

D.Breakdownvoltage

10