AGMsemi-AGM401H VER2.68宏盛微半导体104.pdf

AGM401H

●GeneralDescription

TheAGM401HcombinesadvancedtrenchMOSFET

PrductSummary

technologywithalowresistancepackagetoprovideo

extremelylowRDS(ON).

ThisdeviceisidealforloadswitchandbatteryBVDSSRDSONID

protectionapplications.

●Features40V1.2mΩ220A

■AdvancehighcelldensityTrenchtechnology

TO-263PinConfiguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

AGM401HAGM401HTO-263330mm25mm800

Table1.AbsoluteMaximumRatings(TA=25)

℃

SymbolParameterValueUnit

VDSDrain-SourceVoltage(VGS=0V）40V

VGSGate-SourceVoltage(VDS=0V)±20V

IDDrainCurrent-Continuous(Tc=25℃)(Note1)220A

cA

DrainCurrent-Continuous(T