宏盛微半导体AGM308S VER2.71.pdf

AGM308S

●GeneralDescription

Prdu

TheAGM308ScombinesadvancedtrenchMOSFEToctSummary

technologywithalowresistancepackagetoprovide

extremelylowRDS(ON).

SRDONID

ThisdeviceisidealforloadswitchandbatteryBVDSS

protectionapplications.

30V6.5mΩ13A

●Features

■AdvancehighcelldensityTrenchtechnologySOP8PinConfiguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

PackageMarkngiandOrderingnIformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

AGM308SAGM308SSOP8330mm12mm3000

Table1.AbsouteMlm

axiumRatings(TA25℃)

SPaValeUnti

ymbolarmeteru

VDSur

rai-SoceVoltVG

Dnage(S0V）30V

VGSGate-SourceVoltage(VDS0V)±20V

Drin