Danfoss丹佛斯Semikron Danfoss Application Note Gate Driver Basics EN Rev-02 应用指南.pdf

ApplicationNote

AN21-002

Revision:02

Issuedate:2024-03-25

Preparedby:PaulDrexhage

Approvedby:ArendtWintrich

Keyword:driver,gate,IGBT,MOSFET,replacesAN-7002,AN-7003,AN-7004

GateDriverBasics

1.Introduction1

2.Topology2

2.1Voltagerating3

3.DriverOutputCapability4

3.1Drivevoltage4

3.2Gatecharge6

3.2.1Qoutandadditionalboostcapacitance9

3.3Averagegatecurrent9

3.4Peakgatecurrent9

4.GateResistor10

4.1Minimumgateresistance10

4.2Internalgateresistor11

4.3Softturn-offresistor11

4.4Powerdissipation11

4.5Resistortype12

4.6Switchingbehaviorofthefree-wheelingdiode12

4.7Influenceonswitchinglosses13

5.PhysicalImplementation14

5.1Connectionsbetweencontrolleranddriver14

5.2Connectionsbetweendriverandmodule15

5.2.1Leaddress15

5.2.2Componentlocation16

5.2.3Additionalcomponents16

5.3PCBlayout17

5.3.1Insulationcoordination18

6.Conclusion19

1.Introduction

Thisapplicationnoteisintendedtoassistintheselectionandimplementationofanoff-the-shelfdrivercore

orplug-and-playgatedriver.ThisapplicationnotereplacesAN-7002,AN-7003,andAN-7004.

Inpowerelectronicssystems,theterm“gatedriver”isgenerallyusedtodescribethecircuitconnectingthe

low-voltagecontroller(containingsoftwareandsystemlogic)tothehigh-voltagepowermodules(containing

IGBTs,MOSFETs,etc.).

CommercialIGBT/MOSFETdriversareavailableinthreebasicclasses:

•DriverICs:Thistermcoversthebroadcategoryofintegratedcircuitsfrombasiclevelshifters(e.g.

3.3Vlogicinput,highcurrentbipolaroutput)tocompletedrivercircuitsintegratinglogicandisolation

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