基于扫描电镜的电子束曝光系统Raith全解.pptxVIP

基于扫描电镜的电子束曝光系统Raith全解;主要内容;XL 30 S FEG(a top performing field emission SEM);第4页/共55页;电子发射枪;电子透镜原理;第7页/共55页;Electron gun produces beam of monochromatic electrons. First condenser lens forms beam and limits current (coarse knob). Condenser aperture eliminates high-angle electrons. Second condenser lens forms thinner, coherent beam (fine knob ). Objective aperture (usu. user-selectable) further eliminates high-angle electrons from beam. ;Beam scanned by deflection coils to form image. Final objective lens focuses beam onto specimen. Beam interacts with sample and outgoing electrons are detected. Detector counts electrons at given location and displays intensity. Process repeated until scan is finished (usu. 30 frames/sec).;;Caused by incident electron passing near sample atom and ionizing an electron (inelastic process). Ionized electron leaves sample with very small kinetic energy (5eV) and is called secondary electron.(Each incident electron can produce several secondary electrons.) Production of secondary electrons is topography related. Only secondaries near surface (10 nm) exit sample. ;如何生成二次电子像;Raith电子束曝光系统;Beam blanker;Beam blanking;Faraday圆筒——测电流;工作方式－高斯束、矢量扫描、固定工作台;Elphy plus主控制界面;曝光图形的制作;增加图层;选定图层;选定图层;显示绘图格点;改变绘图格点间距;选用画笔;第26页/共55页;第27页/共55页;第28页/共55页;曝光图形设计注意事项;;第31页/共55页; n-Si;对准调节;两套坐标的刻度校准;标准样品;第36页/共55页;第37页/共55页;;第39页/共55页;;第41页/共55页;第42页/共55页;曝光参数设置－扫描电镜;曝光参数设置－Elphy plus;第45页/共55页;曝光剂量的选择;手动对准标记;第48页/共55页;第49页/共55页;纳米器件的主要制作步骤;基片准备和样品分散;定位和曝光图形设计;镀膜和剥离;第54页/共55页;感谢观看！