MOCVD及外延关键之专利.pptVIP

Content Introduction The comparison of Epitaxial Techniques The mechanism of MOCVD The comparison of various MOCVD The principle of MO Epitaxy Application Introduction MOCVD之命名 MOCVD → metal-organic chemical vapor deposition (金屬有機的 化學氣相沉積) OMVPE → organometallic vapor-phase epitaxy (有機金屬的 氣相磊晶) ( MOCVD, OMVPE, MOVPE, OMCVD ) The comparison of Epitaxial Techniques Liquid-Phase Epitaxy (LPE) ? 液相磊晶 Vapor-Phase Epitaxy (VPE) ? 氣相磊晶 Organmetallic Vapor-Phase Epitaxy (OMVPE) ?有機金屬氣相磊晶 Molecular-Beam Epitaxy (MBE) ?分子束磊晶 Chemical-Beam Epitaxy (CBE) ? MOCVD MBE (MOMBE) The Mechanism of MOCVD Gas Mixing Box Carrier gas Hydride source MO source Lamina flow field Reactor Gas flow (Horizontal Vertical) Heater element ( RF-induction Resistance heater ) Cooling system Down Stream Exhaust Auto Control Safety Control System Gas Mixing Box – Carrier Gas Gas Mixing Box – Hydride Source Gas Mixing Box – MO Source The lamina flow field The down stream Exhaust Auto Control System The comparison of various MOCVD Horizontal Reactor AIXTRON THOMAS SWAN Vertical Reactor VEECO Two-flow MOCVD Nichia → Nakamura Three-flow MOCVD NIPPON SANSO Horizontal Reactor --- I Horizontal Reactor --- II Horizontal Reactor --- III Vertical Reactor Two-flow MOCVD Three-flow MOCVD The principle of MOCVD’s Epitaxy MOCVD 磊晶機制 Using metal alkyls as sources Chemical reaction Ga(CH3)3 + NH3 → GaN + ….. Ga(CH3)3 +In(CH3)3 + NH3 → InGaN + ….. Ga(CH3)3 +Al(CH3)3 + NH3 →AlGaN + ….. Key processes in MOCVD growth Thermodynamics Mass and heat transport Physical surface processes Chemical reactions Subsurface processes GaN LED growth Device structure Epitaxy Patents issue Device structure Epitaxy Nucleation layer (buffer layer) L.T. GaN growth N-tpye layer H.T. GaN:Si growth Active layer DH SQW MQW P-type layer H.T. GaN:Mg growth OES/ITRI’s GaN wafer Pattern Issue 磊晶技術的難題 磊晶技術的關鍵專利 Buffer layer 關鍵專利 P-type 活化之關鍵專利 Device structure 之關鍵專利 製程技術的難題及專利 磊晶技術的難題 Buffer layer P-typ