硅微通道板电化学腐蚀过程中空穴的输运特性的研究-物理电子学专业论文.docxVIP

II II 摘 要 随着硅微通道阵列在生产生活、医疗航天等应用领域的作用变得越来越重要，大 家对利用成本低、方法比较简便的电化学腐蚀技术来制备微通道结构的关注度在明显 上升。于是，对于硅微通道电化学腐蚀过程的机理研究被更加的重视起来，而在硅微 通道电化学腐蚀过程中空穴的输运性质正是其中比较重要的一点。 本文以硅相关特性为基础，阐述了光照辅助电化学腐蚀硅微通道阵列载流子的输 运原理；说明了在半导体硅材料中存在的载流子输运机制的模型，如杂质散射机制和 晶格振动散射机制的原理；通过改变光源的位置来控制照射到硅片上的光强，通过不 同光强条件下的 Mott-Schottky 曲线得到相对应的平带电位，比较得出随着光强的降低， 平带电位为负值且其绝对值也在减小，也就意味着光生空穴的产生变少了；通过对不 同腐蚀电压条件下得到的硅微通道阵列的形貌进行比较与分析，根据通道形貌与空穴 输运情况的相关关系，得出过高的腐蚀电压会导致输运的空穴量超出所需，而过低的 电压又导致输运的空穴量不足，因而需要选择一个较为合适的腐蚀电压，大约在 0.6V 左右；通过对不同温度条件下平带电位的变化进行分析，得出温度的升高可以促进空 穴的输运的结论，同时通过对不同温度条件下得到的硅微通道阵列形貌和进行比较与 分析，根据通道形貌与空穴输运情况的相关关系，得出过高的温度会导致输运的空穴 量超出所需，而过低的温度又导致输运的空穴量不足，因而需要选择一个较为合适的 温度，大约在 21℃左右。 关键词：硅微通道 光电化学腐蚀 光生空穴 输运特性 腐蚀电压 温度 III III ABSTRACT As silicon microchannel array is becoming more and more widely applied in production and living, medical, aerospace and other application fields, the focus on electrochemical corrosion technology with the characteristics of low cost, simple and convenient to prepare the microchannel structure is obviously increased. So, the study on the mechanism of electrochemical corrosion process for silicon microchannel was attracted more attention, and in the process of silicon microchannel electrochemical corrosion, the transport property of the cavity is one of the most important point. In this paper, we expounds the light auxiliary electrochemical corrosion principle of silicon microchannel array carrier transport based on the related characteristics of silicon, illustrated the model that in the semiconductor silicon material carrier transport mechanism, such as impurity scattering mechanism and the principle of lattice vibration scattering mechanism. By changing the position of the light source to control the exposure to the light intensity on the silicon wafers, through the different light intensity of the Mott – Schotty curve to get the corresponding flat band potential, we can draw that by the comparison with the reduction of the light intensity, the flat band potential was negative and also reduced,