粉末涂覆法制备cigs光吸收层及其性能优化物理电子学专业论文.docxVIP

内蒙古大学硕士学位论文PREPARATl0N 内蒙古大学硕士学位论文 PREPARATl0N A加PERFORMANCE OF CIGS SOLAR CELLS OF ABSOI之PTION LAYERS PRER姗D BY POⅥ1DER COATINGⅣ匝THOD AB STRACT Copper indium gallium selenide(CIGS)is a kind of direct bandgap semiconductor materials and has chalcopyrite structure，a high absorption coefficient (1 05cm。1)，a wide range of broad spectrum and high stability．Therefore，CIGS attracts many researchers all over the world． In this thesis，the CIGS thin films were fabricated by paste coating．The manufacturing process is as follows：(1)preparing a precursor paste by ball—milling method，(2)pasting the thin precursor layer on the substrate，(3)exerting pressure to precursor layer before annealing，(4)annealing the precursor layer to form CIGS thin films at the atmosphere of Ar．Effect of different milling and annealing conditions on the properties of pastes and thin films were studied．Slurry particle size analyzer, X—ray diffraction(XRD)，Field emission scanning electron microscope(FESEM)， energy dispersive X-ray analysis(EDAX)and UV-vis spectrophotometer were used to investigate the particle size，structure，morphology and band gaps． With the increase of the ball-to—powder ratio and the ball milling time，the prepared thin films had the pure single—phase chalcopyrite structure．Diffraction peaks of XRD were intense and narrow with(1 1 2)、(400)and(3 1 6／332)preferred orientation，which indicated good crystallinity．The addition of 0．6ml polyethylene glycol，the reunion phenomenon had no obvious change with the incubation time increasing．Annealing 3 0min，the best thin films were fabricated at 5 00。C． 11 万方数据 内蒙古大学硕士学位论文Moreover,the 内蒙古大学硕士学位论文 Moreover,the properties of the thin films were also good．The precursor layers were exerted by the different pressures．It can be seen from the plan—view FESEM micrographs that the surfaces of these samples became more uniform and dense with the increase of pressure，The suitable pressure is 90 MPa．When annealing temperature was 500℃，the thin films ha