带有热管的新型CVD反应器的设计和研究-化工过程机械专业论文.docxVIP

万方数据 万方数据 中文摘要 在多晶硅产业中，硅烷法作为生产电子级高纯多晶硅的新型方法有着改进西 门子法所不具备的优点：硅烷的分解温度较低、能耗少、硅烷作为原料气容易提 纯、产出的多晶硅纯度高、原料气中硅的质量分数高（w=87.5%）、硅烷消耗少 等，是一种非常有发展前景的新工艺。但是硅烷法在生产高纯度多晶硅面临的一 个主要问题是多晶硅还原炉内局部温度过高（T400℃），容易产生粉末硅污染 硅棒，影响硅棒质量品质，不能够达到电子级高纯多晶硅的要求。 本文主要研究开发一种新型的多晶硅还原炉，以弥补传统反应器的不足之处。 新型多晶硅还原炉是在传统多晶硅还原炉的基础上进行设计和开发的，对传统多 晶硅还原炉主要做了以下三点改进：（1）在硅棒周围增设了外壁面高度抛光的 热管；（2）炉膛内部中央出气口处增设了导流筒；（3）增加了内插进气口。本 文的研究重点是研究新型还原炉内的流场及温度场规律。对新型还原炉的模拟研 究发现：导流筒对还原炉顶部气体起到了收集和导出的作用；热管结构的加入也 对炉内气体的流动起到限制与引导的作用；内插进气口与热管结构的共同作用使 炉内的流场与温度场都出现了分区现象。炉内流场与温度场分布较为均匀，炉内 没有形成气体大漩涡和温度过高的区域。 对能耗的分析发现，热管壁温从 423K 升高至 623K 时硅棒的总能耗和辐射 能耗分别降低了 2.84%和 3.87%；当热管壁面发射率从 0.2 降低至 0.02 时，硅棒 的总能耗和辐射能耗分别降低了 21.75%和 24.42%。这说明改变热管壁面发射率 要比改变表面温度对能耗的影响要大。 关键词：多晶硅还原炉 温度场 流场 能耗 ABSTRACT In the polysilicon industry, the silane method has advantages that Siemens doesn’t have: silane has a lower deposition temperature, less energy consumption, silane is easily purified, the output polysilicon has a high purity, the silicon content in silane is high(w=87.5%), which makes the consumption of silane is little. It has a bright development prospect. However a major problem the silane method has to face is that when the environment temperature of furnace is over 400℃，it’s easy to generate silicon powder which can pollute the silicon rods and affect the quality of the rods, making the production can’t achieve the requirements of high-purity polysilicon at the electronic level. The paper is mainly to develop a new polysilicon reduction furnace, in order to compensate for the shortcomings of the traditional silane reactor. The new polysilicon reduction furnace is designed and developed on the basis of the conventional polysilicon reduction furnace, it has three improvements: (1).adding heat pipes which surface is highly polished around silicon rods. (2).adding a guide tube at the center outlet. (3).adding interpolation inlet. This article is mainly study the law of flow field and temperature field in the new reduction furnace. The simulation study of new reduct