富硅氮化硅及其硅量子点薄膜材料的制备及其特性研究-物理学;光学专业论文.docxVIP

内蒙 内蒙古师范大学硕士学位论文 万方数据 万方数据 2.45；沉积速率随温度升高有增大趋势但变化不明显；制备的薄膜主 要为非晶结构的富硅氮化硅薄膜。 2.对薄膜进行退火研究发现，随退火温度的升高，薄膜中硅、氮 缺陷态的荧光发光强度呈现先减小后增大的趋势，而由非晶硅团簇或 硅量子点存在的而产生的发光现象其峰值强度则呈现一直增大的趋 势。随着温度的升高，薄膜中硅、氮悬键与缺陷态产生了相应的变化， 一些缺陷态消失的同时另一些缺陷态随温度升高而产生。同时，由于 薄膜中硅元素的含量相对较少，退火过程中难以形成大晶粒结构， Si-N键重组产生了更多非晶硅团簇或硅量子点结构。 关键词：等离子增强化学气相沉积，富硅氮化硅，硅量子点，退火， 硅团簇 ABSTRACT After the beginning of 21st century, the development speed of world economy is getting faster and faster. The environmental protection and the exploration of clean energy become a vital issue all over the world. Solar cell is one kind of the green and non-polluting devices. It can transform the light energy into electric energy and people are getting more concern about the research of solar battery. Among all kinds of industrial solar cells, lower photovoltaic conversion efficiency is the biggest problem. The current situation makes the cost of solar cell much higher than conventional power generation method. Finding a new kind of material with high photovoltaic conversion efficiency is hot point within material physics, photovoltaic device and energy science research. In the recent years, with the exploitation and research of the third generation of solar cell, silicon-based nanomaterials based on silicon nitride thin film are applying to preparing new kind of solar cells. Such as solar cells with middle band gap and multi-excitons. This kind of material has many advantages which are abundant sources and simple produce process. We can control the microstructure and luminescence property by regulating synthesis parameters. In this thesis, silicon nitride thin films were fabricated by plasma-enhanced chemical vapor deposition (PECVD), which has the advantage of lower deposition temperature, faster deposition speed, better quality, less defect and no easy chaps. X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis spectroscopy were used to characterize the thin films, and researched microstructure, crystallization cond