gaas材料划切工艺研究-study on dicing process of gaas material.docxVIP

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gaas材料划切工艺研究-study on dicing process of gaas material.docx

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gaas材料划切工艺研究-study on dicing process of gaas material

3摘要AbstractDicingsawsliceanddividesemiconductordevicebydiamondblade’shighspeed grinding．Semiconductormaterialsiliconandceramicareallhardandbrittlematerial，becauseoftheirspecialityandstrictwidthlimitofdicingstreetofsemiconductordevice，thewaferdicingprocessisveryimportantinsemiconductordevicemanufacturing．To improvetheutilizingrateofmaterial，Semiconductormanufacturingindustrystrictly limitthewidthofdicingstreet．Forhardandbrittlematerial，itiseasytocracktheedgesofstreetanddamagethecomponentswhendicingToutilizematerialeffectivelyand improveyield，thewidthofdicingstreetandedgecrackmustbeminimized．Thefactors whichcouldinfluencedicingefficiencyandqualityareperformanceofmaterial，performanceofequipment，bladeanddicingprocess．Thepapersstudiesthedicingtheory andprocessofsemiconductordicing,viaanalyzingtheabovefactors，andoptimizing parameters ofdicing process．Thepaperanalyzescharacteristicsofsiliconandceramicmaterial，andstudiesair bearingspindlespeed，dicingspeed，dicingdepth,coolantmethodandvolumeofflow, describes detail the main factors which influencedicing street and lead edgecracks．Adopting Taguchi methodology，via orthogonal experiment, to quantitativelyresearchfactorswhichcouldbecontrolled，andanalyzefactorswhichcouldnotbe controlledbyorthogonalchart．Alterprocessingexperimentdatum,wegetoptimizedprocessparameters,andcompleteexperiment，Studyshowsthewidthofdicingstreetandsizesofedgecracksaredecidedbyspindlespeed，dicingspeed，dicingdepth,blade coolantflowvolumeand coolantmethod．Ahigherspindlespeedcouldleadtoaslowerdicingspeed，awiderdicingstreetandasmalleredgecracks．Ashallowdicingdepthandsuitablecoolantflowvolumecouldgetabetterdicingeffect．Theprecisionofthe endfaceoftheflangedecidedirectlythedicingquality,aoptimizedbladeflangemechanism would help decreasewidth of dicing street andedgecracks．Afterasystemstudy,thepaperproposesoptimumprocessparameterssuitablefor ceramicand silicon, and improvement methods forequipment．Thepaper’s studycouldhelpimprovematerialutilizingrateandyieldofsemico