25N06 深圳市盛佰威电子36.pdf

Huajing Discrete Devices R ○ Silicon N-Channel Power MOSFET CS25N06B4 General Description： VDSS 60 V CS25N06B4, the silicon N-channel Enhanced VDMOSFETs, is ID 25 A P (T =25 ℃) 50 W obtained by the self-aligned planar Technology which reduce the D C conduction loss, improve switching performance and enhance RDS(ON)Typ 28 mΩ the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： Fast Switching Low ON Resistance(Rdson≤36 mΩ) Low Gate Charge (Typical Data:13nC) Low Reverse transfer capacitances(Typical:87pF) 100% Single Pulse avalanche energy Test Applications ： Automotive 、DC Motor Control and Class D Amplifier. Absolute （Tc= 25 ℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current 25 A ID Continuous Drain Current T = 100 °C 18 A C a1 IDM Pulse