GaN-based Semiconductor Devices for Terahertz TechnologyGaN基半导体器件的太赫兹技术精品.pdfVIP

Terahertz Science and Technology, Vol.1, No.2, June 2008 51 GaN-based Semiconductor Devices for Terahertz Technology Yue Hao, Lin-An Yang* and Jin-Cheng Zhang Key Lab of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China *Email: layang@xidian.edu.cn Abstract ：The advantages of the properties of GaN over traditional III-V materials are discussed for applications in terahertz (THz) regime. Consequently the GaN-based devices which include electronics and photonics devices are investigated with emphases on the theoretical and practical developments of Quantum Cascade Lasers, Plasma Wave FETs and Negative Differential Resistance diodes. The results demonstrate that GaN is a promising material for THz semiconductor devices with an excellent performance in operating temperature, frequency and output power. It is found that the dislocations in GaN crystal seriously impact on the performance of THz devices. It is also shown that a great progress of MOCVD technique gives the potential in GaN epitaxial growth for THz applications. Finally, our recent jobs in GaN fabrication are revealed to demonstrate the further researches in THz regime. Keywords: Terahertz, GaN, Quantum cascade laser, Plasma wave, Negative differential resistance. I. Introduction Terahertz (THz) regime, roughly corresponding to the frequencies from 100 GHz to 10 THz (3 mm to 30 μm), has attracted many attentions in the last decade because of its promising applications in medical, biological and industrial imaging, broadband and safety communication, radar, space science, etc. The so called “teraher