深沟式DRAM资料保存时间之测试方法与相关参数之-先进工程学刊.PDFVIP

先進工程學刊第五卷 第二期 129 Journal of Advanced Engineering Vol. 5, No. 2, pp. 129-136 / April 2010 深溝式 DRAM資料保存時間之測試方法與相關參數之設定 Testing Methods for the Data Retention Time of Deep Trench DRAM and Related Parameters Setting * 王志弘 溫武義 * Chih-Hung Wang , Wu-Yih Uen 摘要 本文探討於深溝式動態隨機存取記憶體 (DRAM) 測試之際，以晶圓測試者 的角度如何調整參數以尋找出可能的漏電機制，從而將訊息反應給製程端，以改 善 DRAM 之資料保存時間。我們同時採用兩種不同測試方法並改變不同的電壓測 試參數，以確切了解產品特性，最終找出最適當的測試參數，將可能的漏電位址 與原因傳達給產品生產端，以便未來提高產品良率，達成本文藉由探討資料保存 時間 (data retention time)的測試條件，進而獲得較好的產出量與品質，以及增加 獲利的最終目的。 關鍵詞 ：資料保存時間，動態隨機存取記憶體，漏電機制 Abstract Two testing methods are used simultaneously to analyze the retention time of deep trench DRAM. Both the gate and base voltages were modulated to find proper testing conditions for the failure analysis. Proper testing conditions will provide useful messages to minimize the abnormal range required for failure analysis, which therefore helps to catch exactly the addresses with leakage and the leakage mechanisms of them. Next, the exact failed addresses can be transferred to the production line to carry out laser repairing and ultimately the product yield is possibly to be improved. Therefore, the objective of this paper is to emphasize the importance of proper parameter setting for the failure testing of deep trench DRAM, which is greatly connected to the through put of products.