Al掺杂ZnO薄膜的结构研究-河北科技大学学报.PDFVIP

32 2 Vol. 32, No . 2 20 11 4 Journal of Hebei University of Science and T echnolo y Apr . 20 11 : 2011) Al ZnO 1, 2, 3 1, 2, 3 3 3 3 1, 2 岂云开 , 顾建军 , 李志文 , 杨淑敏 , 王振文 , 孙会元 ( 1. 河北师范大学物理科学与信息工程学院, 河北石家庄 0500 16; 2. 河北省新型薄膜材料重点实 验室, 河北石家庄 0500 16; 3. 河北民 师范学院物理系, 河北承德 067000) : 采用直流反应磁控溅射方法, 在玻璃衬底上制备了Al 掺杂ZnO 薄膜系统研究了不同氩 氧体积比不同退火温度和氛围不同Al 掺杂浓度对薄膜结构的影响结果显示, Al 掺杂ZnO 薄 膜为多晶薄膜, 呈六角纤锌矿结构, 制备条件和后期处理以及掺杂浓度对薄膜的微结构有着很大的 影响在氩氧体积比 6 1 条件下制备的薄膜, 经真空500 退火后具有较好的结晶和明显 的( 002) 择优取向 : ZnO 薄膜; 结构特性; 磁控溅射; 退火 : O484. 1 : A Study on structure of aluminumdoped zinc oxide films 1, 2, 3 1, 2, 3 3 3 3 1, 2 QI Yunkai , GU Jianjun , LI Zhiw en , YANG Shumin , WANG Zhenw en , SUN Huiyuan ( 1. Colle e of Phy sics Science Information En ineerin , H ebei Normal University , Shijiazhuan Hebei 050016, China; 2. Key Laboratory of Advanced Films of Hebei Province, Shijiazhuan Hebei 0500 16, China; 3. Department of Physics, H ebei Normal University for Nationalities, Chen de Hebei 067000, China) Abstract: Al doped ZnO thin films were prepared on lass slide subst rates by ma netron sputterin . The effects of different ar on oxy en ratios, the annealin temperature, the annealin ambient and Al content on the structure have been investi ated sy stematically. The results show t hat all f ilms can be index ed as ZnO hexa onal structure, and the processin parameters play an important role in the microstructures. Moreover , the film deposited at ar on oxy en rat io of 61 and annealed in vacuum at 500 show s ood crystallization w ith preferred rowth ( 002) direction. Key words: ZnO films; structure; ma net ron sputterin ; anne