KEITHLEY讲座2.pptVIP

4200-PG2 Specs 2 modes High Speed: ±5V max (50 Ω), 100 mA, 50 MHz frequency Minimum Pulse Width (PW FWHM): 10 ns High Voltage: ±20V max (50 Ω), 800 mA, 2 MHz frequency Minimum Pulse Width (PW FWHM): 250 ns Incremental Adjustment Rise Time, Fall Time, Width, Period 10 ns increments Pulse Capability of 4200-PG2 High Speed Mode (25 Mhz shown) Controllable Through a KITE UTM Control Virtual Front Panel For Use as a Stand Alone Pulser Kpulse: Full Arb Arb Generator Tab What Applications Need the PG2? Charge Pumping to characterize interface traps on MOS and MIS devices Typically requires 1 MHz rate, variable edges, variable duty cycle pulse, and DC measure AC Stress during reliability testing Typically requires 1-2 MHz, 50% duty cycle. Many other applications Anytime a user needs a pulse source while testing/characterizing materials or devices 4200-SCP2 Dual Channel Oscilloscope 2 Channels Sample Rate: 1.25 GS/s per channel (2.5 GS/s single channel) Bandwidth: 750 MHz Resolution: 8 bits BNC Connectors for channel input Trigger In/out (SMB connectors) 50 Ω or 1 MΩ termination (selectable) Optional probe kit (4200-SCP2-ACC) Included Front Panel GUI for stand alone use Semiconductor Technologies are Changing More Rapidly Than Ever Before High K gate stacks Metal gate Cu/Low K Strained Si, SiGe, SOI Novel devices ( FINFET, CNT..) Nano technology … Pulse Measurement Capability is Becoming Increasingly Critical The evolution of semiconductor technology will demand new measurement techniques beyond DC source-measure to completely characterize new materials and devices. Pulse is essential for: Devices with isothermal limitations (SOI devices, FinFETs, Power FETs) to avoid self-heating. Charge trapping for high κ gate dielectrics. AC stress for device reliability and lifetime testing. Charge pumping for high κ gate dielectrics. Introducing the 4200-PIV Package The PIV Package Integrates: Pulse Generator, Pulse Measure, Interconnect, and Software Dual channel