PN Diode ProjectPN结二极管项目.docVIP

ACUTE: PN Diode Modeling Dragica Vasileska and Gerhard Klimeck Equilibrium Solver: You are provided with a MATLAB script of an equilibrium 1D Poisson equation solver for a pn-diode. Please try to understand and run the code for the following doping densities: NA = 1016 cm-3, ND =1016 cm-3 NA = 1016 cm-3, ND =1018 cm-3 NA = 1018 cm-3, ND =1018 cm-3 For each of these cases plot the potential and electric field profiles, the electron and hole densities and the total charge densities. From these plots extract the width of the depletion region and the peak electric field. Compare your simulated data with the depletion charge approximation analytical results. Non-Equilibrium Solver: Develop a one-dimensional (1D) drift-diffusion simulator for modeling pn-junctions (diodes) under forward and reverse bias conditions. Include both types of carriers in your model (electrons and holes). Use the finite-difference expressions for the electron and hole current continuity equations that utilize the Sharfetter-Gummel discretization scheme. Model: Silicon diode, with permittivity and intrinsic carrier concentration at T=300K. In all your simulations assume that T=300K. Use concentration-dependent and field-dependent mobility models and SRH generation-recombination process. Assume ohmic contacts and charge neutrality at both ends to get the appropriate boundary conditions for the potential and the electron and hole concentrations. For the electron and hole mobility use 1500 and 1000 cm2/V-s, respectively. For the SRH generation-recombination, use TAUN0=TAUP0=0.1 us. To simplify your calculations, assume that the trap energy level coincides with the intrinsic level. Doping: Use and as a net doping of the p- and n-regions, respectively. Numerical methods: Use the LU decomposition method for the solution of the 1D Poisson and the two 1D continuity equations for electrons and holes individually. Use Gummels decoupled scheme, described in the class, to solve the resultant set of co