IGBT论文：IGBT PSpice 数值模型 温度 三电平 损耗.docVIP

【关键词】IGBT PSpice 数值模型 温度 三电平 损耗 【英文关键词】IGBT PSpice numerical model temperature three-level loss IGBT论文：IGBT数值分析模型及其在NPC三电平变换器损耗分析中的应用 【中文摘要】近些年,绝缘栅双极型晶体管(IGBT)在现代电力电子技术中应用广泛。PSpice、MATLAB等模拟软件模型库内的功率器件模型通常不能直接用于对功率器件模拟。物理和功能性两类模型在建立IGBT模型时被广泛的采用。但这两种模型的计算量大,参数调整难。许多模型没有考虑温度对参数的影响,模型的准确度难以达到高标准。本文从IGBT内部结构及其原理出发,给出了一种新颖简便的IGBT建模方法。本文主要内容分为以下三个方面：首先,对基础理论部分作了介绍。具体阐述了本论文的,并且对IGBT的发展现状作了简要概括。主要描述了IGBT结构的演变历程、工作原理及基本特性,并对IGBT的基本结构和等效电路结构作了详细的对比分析。其次,结合厂商提供的特性曲线和特征参数,考虑温度效应的影响,推导计算出IGBT内部主要参数,建立了IGBT的PSpice模型。对该模型在单IGBT回路中进行仿真,并检验了温度对IGBT的静态特性和动态特性的影响。将该模型应用于NPC三电平变换器仿真模型进行仿真和三电平变换器损耗研究。功率器件(包括IGBT和二极管)在工作时要产生损耗,包括通态和开关损耗。针对大多数仿真软件忽视外界温度对器件特性参数的影响,进而影响仿真计算器件损耗,本文在建模中考虑了此点,所建模型参数可根据温度方便修改,因此仿真和实验的对比性更高。最后,建立了三电平变换器平台并实验,对实验测量的损耗值与仿真计算的数据进行了比较,分析了影响损耗的内在因素。根据仿真、实验波形和损耗计算结果,验证所建IGBT模型的正确性。 【英文摘要】In recent years the Insulated Gate Bipolar Transistor (IGBT) has been widely used in modern power electronic technology. Usually the power devices models in PSpice and MATLAB ware are not able to be simulated directly for power devices. While establishing IGBT model, physical and functional models are widely used. But they have many defects, such as complex calculation, and it is very difficult to modify the parameters. Besides, they don抰 consider the impact of temperature, so it isn抰 so perfect on accuracy.This thesis presents a new easy approach to the IGBT model by the internal structure and principle of IGBT. The main contents of this thesis could be divided into three parts:Firstly, the basis of the theoretical part is introduced. This thesis specifically describes the background and briefly summarizes the development of the IGBT. Then the course of the evolution of IGBT structure, the principle of its work and its basic characteristics are introduced. Besides, the differences between the basic structure and equivalent circuit structure of IGBT are very detailed comparative analyzed.Secondly, combining with characteristic curve and parameters of d