WB 教材.ppt

A080 WIRE BOND PROCESS INTRODUCTION Semiconductor Packaging Process CONTENTS A. PURPOSE B. PRINCIPLE C. PROCESS D. M/C BASIC DATA E. MATERIAL F. PARAMETER G. DEFECTS H. REFERENCE A.PURPOSE FORMING A STRONG AND RELIABLE INTERTALLIC BOND BETWWEEN THE WIRE AND THE PAD , AS WELL AS BETWEEN THE WIRE AND THE LEAD A.PURPOSE B.PRINCIPLE HARD WELDING: PRESSURE AMPLIFY FREQUENCY WELDING TIME WELDING TEMPATURE THERMOSONIC BONDING: THERMAL COMPRESSURE ULTRASONIC ENERGY(1.2MHZ) B.PRINCIPLE C. WIREBOND PROCESS Free air ball is captured in the chamfer Free air ball is captured in the chamfer Free air ball is captured in the chamfer Free air ball is captured in the chamfer Free air ball is captured in the chamfer Formation of a first bond Formation of a first bond Formation of a first bond Formation of a first bond Capillary rises to loop height position Capillary rises to loop height position Capillary rises to loop height position Capillary rises to loop height position Capillary rises to loop height position Formation of a loop Formation of a loop Formation of a second bond Formation of a second bond Disconnection of the tail Disconnection of the tail Formation of a new free air ball D. M/C BASIC DATA M/C TYPE: KS 1482, 1484, 1484XQ, 1484 LXQ, 1488 TURBO, 1488 PLUS KS 8020, 8028, 8028+KIT, 8028PPS KS MAXum UPH: QFP100L 0.15K/HR , 208L 0.065K/HR, SOJ8L 5K/HR , BGA553L 0.023K/HR M/C COST: US$ 90K E. MATERIAL CAPILLARY Vender: Micro-Swiss, Gaiser, SPT Cost: NT$400~500 F. PARAMETER LIST Bond 1 Parameter TIP C/V USG Power USG Bnd Time Force PARAMETER LIST Loop Parameter Wire Profile Kink Height Reverse Motion Loop Factor Contact Angle Span Length Shape Factor G. DEFECT Bond 1 Ball lifting Ball size Ball location Ball Deformation Ball short Cratering Metal void G. DEFECT Looping Shorting wire Wire sag Wire loop Damaged wire Broken wire H. REFERENCE MICRO-SWISS CAPILARY CATALOG - IMMMEX COMPANY CO., LTD. ASE SPEC NO. 64-02-080-001