HSiCMESFET大信号非线性特性分析-西安电子科技大学.PDFVIP

25 2 Vol. 25 No. 2 2009 4 JOURNAL OF M ICROWAVES Apr. 2009 : 2009) 02007 05 * 4HSiCMESFET 1 2 1 1 1 1 吕红亮 车 勇 张义门 张玉明 郭 辉 张 林 ( 1. , , 710071; 2. , 7100 6) : Volterra 4HS iCM ESFET, , , 1GH z 1. 01GH z, 0. m 1. 6m, () 33. 55dBm ( 36. 26dBm ) 1 . 1dBm ( 13. 4dBm ), 1dB 24dBm 7. 43dBm : , , , Volterra The NonlinearAnalysis for 4HSiCMESFETs 1 2 1 1 1 1 LUHongliang , CHE Yong , ZHANG Y im en, ZHANG Yum ing , GUO Hui, ZHANG L in ( 1. M icroelectronics Institute, K ey Laboratory of W ideBandGap Sem iconductor Materials and Devices of theM inistry of ducation, X id ian University, X i an, 710071, Ch ina; 2. ng ineering College of Armed PoliceForce, X i an, 7100 6, China) A stract: Based on the equivalen t circuit of S iC MESFETs, the large signal nonlinear characteristics is investigated using Volterra series. The m odel including trapp ing effect reflects the m easured non linear characteristics of S iC MESFET s very well. For a 0. , 1. 2 and 1. 6m gate length FET operating at 1GH z, ou tput referred th irdorder intercept point ( O IP3) are 36. 3 dBm, 24. 6 and 14. 3 dBm respectively. The shorter gate length devices show mi provem ent in linearity. The smi ula tion ind icates that the d ispersion frequency increasesw ith elevated temperature. The proposedm odel is valuab le for the analy sis of frequency dispersion in the device. Key w ords: S ilicon carb ide, MESFET, Nonlineariy, Volterra series