degradation mechanisms for gan and gaas high speed transistors氮化镓和砷化镓高速晶体管退化机制.pdfVIP

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degradation mechanisms for gan and gaas high speed transistors氮化镓和砷化镓高速晶体管退化机制.pdf

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degradation mechanisms for gan and gaas high speed transistors氮化镓和砷化镓高速晶体管退化机制

Materials 2012, 5, 2498-2520; doi:10.3390/ma5122498 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Review Degradation Mechanisms for GaN and GaAs High Speed Transistors 1 2 3 3 2 3 David J. Cheney , Erica A. Douglas , Lu Liu , Chien-Fong Lo , Brent P. Gila , Fan Ren and Stephen J. Pearton 2,* 1 Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA; E-Mail: djcheney@ 2 Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA; E-Mails: ericaadouglas@ (E.A.D.); bgila@ (B.P.G.) 3 Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA; E-Mails: luliu@ (L.L.); cflo@ (C.-F.L.); ren@ (F.R.) * Author to whom correspondence should be addressed; E-Mail: spear@; Tel.: +1-352-219-0290; Fax: +1-352-846-2877. Received: 24 October 2012; in revised form: 23 November 2012 / Accepted: 23 November 2012 / Published: 27 November 2012 Abstract: We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different