ALD原子层沉积技术的前驱体工艺及材料.pptVIP

NANO-MASTER, INC. 新ALD工艺 Recently, different alkylsilyl compounds have been studied for tellurium and selenium precursors. It has been demonstrated that metal chlorides react with (Et3Si)2Te and (Et3Si)2Se, producing metal tellurides and selenides, respectively. For example, the Sb2Te3 and GeTe processes using SbCl3, GeCl2·C4H8O2 and (Et3Si)2Te as precursors were combined to produce GST ?lms. Surface-limiting growth can also be applied to the deposition of polymer thin ?lms. This polymer ALD is usually referred to as molecular layer deposition (MLD). For example, the surface-limiting growth of polymer thin ?lms has been demonstrated for poly(p-phenylene terephthalamide), polyimides, and Nylon 66. Since these depositions can be carried out using similar coating tools to those used in conventional ALD, the preparation of inorganic–organic hybrid materials and nanolaminates is straightforward. NANO-MASTER, INC. NANO-MASTER ALD 原子层沉积 前驱体、工艺和材料 吴运祥 2017年7月25日 NANO-MASTER, INC. 概述 New ALD processes and materials are being actively developed at several Universities. ALD was demonstrated for the TFEL application for the ?rst time by ZnS deposition using elemental zinc and sulfur in the mid-1970s, followed by the use of ZnCl2 and H2S. After the initial period, several other inorganic precursor types have emerged. During the second half of the 1980s metal organic precursor chemicals were adapted for ALD material research. This opened up plenty of possibilities for new ALD chemistries and processes. A large number of ALD processes have been demonstrated and published to date, and the list keeps growing (Below Table). NANO-MASTER, INC. 概述 Table：ALD沉积材料举例 NANO-MASTER, INC. ALD前驱体概述 General ALD precursor requirements differ from other chemical gas-phase methods since all gas-phase reactions should be excluded and reactions take place only at the surface. Although chemical vapor deposition (CVD) precursors can sometimes be used for ALD, no