基于混合型量子阱的GaN基垂直结构发光二极管性能-发光学报.PDF

第36卷摇 第6期 发摇 光摇 学摇 报 Vol郾36 No郾6 2015年6月 CHINESEJOURNAL OF LUMINESCENCE June,2015 文章编号:1000鄄7032(2015)06鄄0639鄄06 基于混合型量子阱的GaN基垂直结构发光二极管性能 * 蔡镇准,胡晓龙 ,刘摇 丽,王摇 洪 (华南理工大学物理与光电学院广东省光电工程技术研究中心,广东 广州摇 510640) 摘要:为解决GaN基垂直结构发光二极管(VS鄄LEDs)在大电流驱动时效率下降的问题,制作了具有耦合量 子阱(CQWs)和传统量子阱(NQWs)的混合型量子阱(HQWs)结构VS鄄LEDs。 与NQWs结构VS鄄LEDs相比, HQWs结构VS鄄LEDs在350 mA输入电流下的正向偏压降低0.68 V,光输出功率提升53.0%,并有更好的电 流响应效率。 同时,NQWs结构和HQWs结构VS鄄LEDs的外量子效率分别下降到最大值的37.7%和67.5%, 表明采用HQWs能使LEDs的效率下降得到大幅缓解。 关摇 键摇 词:GaN;垂直结构LEDs;混合型量子阱;效率下降 + + 中图分类号:TN383 .1;TN312 .8摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0639 Performance of GaN鄄based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells * CAI Zhen鄄zhun,HU Xiao鄄long ,LIU Li,WANG Hong (Engineering Research Centerfor Optoelectronics of Guangdong Province,School of Physics and Optoelectronics, South China University of Technology,Guangzhou510640,China) *Corresponding Author,E鄄mail:scxlhu@ Abstract:In order to solve the problem that GaN鄄based vertical structure LEDs (VS鄄LEDs) suffer from efficiency droop under high current injection level,hybrid quantum wells (HQWs) with cou鄄 pled quantumwells (CQWs)andnormalquantumwells (NQWs)wereemployed. ComparedtoVS鄄 LEDswith NQWs,VS鄄LEDswith HQWs had better properties,wherein forward voltage reduced by 0.68Vandlight鄄outputpowerincreasedby53.0% ataforwardcurrentof350 mA. Meanwhile,the relative external quantum efficiencies of VS鄄LEDswith NQWs and VS鄄LEDswith HQWsreduced to 37.7% and67.5% of their maximum,respectively. The results