gan hemt 器件封装热特性仿真分析 the simulation analysis of the packaged gan hemt device’s thermal characteristic.pdfVIP
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gan hemt 器件封装热特性仿真分析 the simulation analysis of the packaged gan hemt device’s thermal characteristic
30 2 Vol.30 ,No.2
2016 4 Journal of Heilongjiang Instituteof Technology Apr.,2016
GaN HEMT
1 1 2 1 3 1 1
, , , , , ,
(1 . , 154007 ;2 . , 154007 ;3 . ,
154007)
:GaN HEMT 。 GaN HEMT
,
,,。 GaN
HEMT。 ,,
。 ,,,
。
:GaN HEMT ;;
:O157.5 :A :1671-4679(2016)02-0038-04
The simulation analysis of the packaged
GaN HEMT device’s thermal characteristic
1 1 2 1
CUI Hongyun ,WU Yunfei ,SI Youbao ,HOU Xianchun ,
3 1 1
ZHANG Yunxiang ,LI Peiyao ,LIU Tao
(1 .Collegeof Science,Jiamusi University,Jiamusi 154007 ,China;2 .Logistics Management Office,Jiamusi University,Jiamusi
154007 ,China;3 .Collegeof Business,Jiamusi University,Jiamusi 154007 ,China)
Abstract :This paper investigates the self-heating effect of thepackaged GaN HEMT devicesat high power
operating conditions. The self-heating effect produced by GaN HEMT device operating at high power
conditions,aswellas theinter-heating between thegates,will makethetemperatureof theactivechannel
layer increase,thus affecting theoperating characteristics of the device.Thispaper,mainly,analyzes the
temperature distribution of the multi-finger GaN HEMT packaged device structure under certain
conditions. The multi-finger GaN HEMT packaged device structure is hottest in its central regions.
Compared to the other finger, the center gate in its central refers to the highest temperature at definite
power loss.Basedonthoseresults,thetemperatureof thecenterfinger shouldbetakenintoaccountwhile
being designedin order to protect the devicefrom burnt.
Key words :GaN HEMT;self-heating effects; ackage.
p
,4G5
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