Thin Film Passivation Characteristics in OLED （薄膜钝化OLED的特征）.pdf

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Vol. 13, No. 2, pp. 93-97, April 25, 2012 pISSN: 1229-7607 eISSN: 2092-7592 Regular Paper DOI: /10.4313/TEEM.203 Thin Film Passivation Characteristics in OLED Using In-situ Passivation Kwan-Do Kim Department of Nano Engineering, Dong-A University, 840 Hadan-dong, Busan 604-714, Korea and School of Advanced Materials and System Engineering, Green Energy System Education Center, Kumoh National Institute of Technology, Gumi 730-701, Korea Hoon-Kyu Shin National Center for Nanomaterials Technology, Pohang University of Science and Technology, Pohang 790-784, Korea Sang-Mok Chang Department of Nano Engineering, Dong-A University, Busan 604-714, Korea and Department of Chemical Engineering, Dong-A University, Busan 604-714, Korea Received December 28, 2011; Revised February 8, 2012; Accepted February 20, 2012 In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying SiO2 and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetr