电子教材-沉积氧气压力对纳米晶硅光致发光的影响（Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon）.docVIP

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电子教材-沉积氧气压力对纳米晶硅光致发光的影响（Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon）.doc

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电子教材-沉积氧气压力对纳米晶硅光致发光的影响（Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon）

电子教材-沉积氧气压力对纳米晶硅光致发光的影响（Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon） Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon.Txt This paper contributes 2020 from the autumn harvest Pdf documents may experience poor browsing on the WAP side. It is recommended that you first select TXT, or download the source file to the local view. Effect of deposition oxygen pressure on Photoluminescence of nanocrystalline silicon Luo Mingxue, Li Changqing, Liu (College of information engineering, Zhengzhou University, Henan, Zhengzhou 450052) With the pulse laser (Nd:YAG laser) deposition deposition on silicon rich silicon thin films of SiO2 (SiOx, x2), the oxygen pressure were 1.33, 3.99, 2.66 for deposits, 5.32, 6.65, 7.98Pa, the film thickness is about 300nm. Subsequently, the deposited SiOx film is annealed at 1000 DEG C at the temperature of 30min (Ar), so that silicon nanocrystals are grown in the SiO2 film. With the analysis of the spectrum analyzer at room temperature photoluminescence (PL) spectra showed that with the increase of deposition oxygen pressure, peak wavelength decreases (i.e. blue shift), showed that the nano silicon particles in reduced; at the same time, the conditions of production in the present study, the PL strength of a strong dependency relation and deposition the oxygen pressure, making sample deposited on the oxygen pressure 2.66-3.99Pa condition, get the maximum PL intensity. Keywords nanocrystalline silicon; photoluminescence; pulsed laser deposition; Chinese classification number TN304.1; TN383; Photoluminescence, properties, of, nanocrystal, Si Luo, Ming-xue, Li, Chang-qing, Yang, Liu (College, of, Information, Engineering, Zhengzhou, Univercity, Zhengzhou, 450052, China) Deposition, oxygen, pressure, effect, on, the Abstract Silicon suboxides (SiOx, x2) thin films with thickness of 300nm on Si matrices have been fabricated by pulsed laser deposition (PLD) technique using a Nd: