Steady state and transient Brillouin gain in （稳态和瞬态布里渊增益）.pdf

International Journal of Scientific and Research Publications, Volume 5, Issue 9, September 2015 1 ISSN 2250-3153 Steady state and transient Brillouin gain in narrow band-gap magnetized semiconductors * ** V. Pal Singh , M. Singh * Department of Physics, Singhania University, Pacheri Bari, Jhunjhunu - 333515, India ** Department of Physics, Amity University, Sector-125, Noida-201301 (U.P.), India Abstract : Using the hydrodynamic model of semiconductor the medium can keep in memory the light induced plasmas, a detailed analytical investigation is made to study coherence for some time after the switching off of the both the steady-state and the transient Brillouin gain in narrow excited pulse. band gap magnetized one-component centrosymmetric Out of the several NLO effects, the nonlinear scattering of semiconductor viz. n-InSb under off-resonant laser irradiation. laser radiation in gaseous and solid state plasmas aroused a Using the fact that origin of stimulated Brillouin scattering great deal of interest in the past few years [ 1-5] on account (SBS) lies in the third-order (Brillouin) susceptibility ( χ(3) ) of of the fact that the absorption of laser radiation in plasma B the medium, we obtained an expression of the threshold pump grea