Large Area gt;8 kV SiC GTO Thyristors with （大面积的在8千伏SiC GTO晶体闸流管）.pdfVIP

Large Area 8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@ Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power. Abstract. This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and gate fingers of Thyristors were designed with involute, cellular or hexagonal patterns. Forward blocking voltages as high as 8106 V and On-state voltage drop (Von) and differential specific on-resistance (Ron,sp) as low as 3.8 V and 6 2 2 2 mΩ-cm at 100 A/cm were measured on these devices. About 59% of 4.1 x4.1 mm and 29% of 2 8.2x8.2 mm Thyristors blocked voltages in excess of 6 kV. Detailed investigations revealed the impact of different anode/gate finger geometries on the device characteristics. Preliminary pulsed power characterization of the GTO Thyristors was also performed. Introduction There is a strong interest for the development of a high voltage, high current, high frequency Silicon Carbide (SiC) based switches for utility applications. These applications demand high frequency power conversion with an order of magnitude higher power levels at an order of magnitude higher frequency as compared to what is achievable with contemporary silicon power devices. As compared to unipolar devices like JFETs and MOSFETs, bipolar-mode switches like Gate Turn-Off (GTO) Thyristors offer low conduction losses in 6 kV ratings, due to high level of minority carrier injection in