Effect of growth temperature of AlN interlayers （影响经济增长的温度夹层）.pdfVIP

011 Phys. Status Solidi C 7, No. 10, 2371–2373 (2010) / DOI 10.1002/pssc.200983864 Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition *, 1 1 2 1 J. S. Xue , Y. Hao , J. C. Zhang , and L. A. Yang 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, 710071 Xi’an, P.R. China 2 School of Microelectronics, Xidian University, 710071 Xi’an, P.R. China Received 31 August 2009, accepted 2 March 2010 Published online 21 June 2010 Keywords AlN, GaN, MOCVD, growth, structure, dislocations, strain relaxation, Raman spectra * Corresponding author: e-mail junshuaixue@, Phone: +86 29 8820 1660, Fax: +86 29 8820 1660 The effect of growth temperature of AlN interlayers on interlayer in GaN buffers. The density of threading dislo- the properties of GaN epilayers grown on c-plane sap- cation is reduced especially for edge type dislocations. phire by metal organic chemical vapor deposition has Higher compressive stress exists in GaN epilayers with been investigated by high resolution X-ray diffraction HT-AlN interlayer than with low temperature AlN (LT- (HRXRD) and Raman spectroscopy. It is concluded that AlN) interlayer, which is related to the reduction of strain the crystalline quality of GaN epilayers is improved sig- relaxation caused by the formation of misfit dislocation. nificantly by using the high temperature AlN (HT-AlN) © 2010 WILEY-VCH Verlag Gm