氮化镓功率半导体器件技术张波.pdfVIP

第30卷　第 1期 Vol. 30, No. 1 　 　　　　　　　　 　　　　　　　　 2010年3月 RESEARCH PRO GRESS OF SSE Mar. , 2010 张　波 　陈万军　邓小川　汪志刚　李肇基 ( ,, 610054) 2009-07-01, 2009-09-05 : ,( GaN), 、、,。 GaN ,( Si) GaN, GaN ,。 GaN , GaN、、、 。 : ;;; : TN304. 2; TN305　　: A　　: 1000-3819(2010) 01-0001-10 GalliumNitride Power Semiconductor Devices Technology ZHAN G Bo　CHEN Wa ju 　DENG Xiaochua 　WAN G Zhiga g　 LI Zhaoji ( , State K ey Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China , Chengdu , 610054, CHN ) Abstract: Gallium Nitride ( GaN) is a attractive w ide ba dgap semico ductor for high- , - , - , - voltage high temperature high freque cy high power applicatio s because of its favorable material characteristics. With the developme t of the large-diameter GaN epiw afers based o silico substrate, GaN-based pow er devices are promisi g ca didates for the low-cost, high- . , - - - efficie cy power ma ageme t solutio I this paper the state of the art GaN based pow er - , devices are summarized a d some issues o GaN based pow er devices a d tech ologies such as breakdow mecha isms a d optimizatio s, device physics a d models, curre t collapse, GaN- based materials, are a alyzed a d prese ted i detail. : ; ; ; Key words gallium nitride power device breakdown voltage specific on resista