ATOMIC LAYER DEPOSITION OF ALUMINUM （原子层沉积铝）.pdfVIP

UNIVERSITY of CALIFORNIA SANTA CRUZ ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE A thesis submitted in partial satisfaction of the requirements for the degree of BACHELOR OF SCIENCE in APPLIED PHYSICS by Noel Mayur Dawson May 30, 2010 The thesis of Noel Mayur Dawson is approved by _____________________ ____________________ Professor Nobuhiko Kobayashi Professor David Belanger Technical Advisor Thesis Supervisor ____________________ Professor David Belanger Chair Department of Physics Abstract This paper will cover the atomic layer deposition (ALD) of aluminum oxide on crystalline silicon and anodized aluminum substrates. A homemade ALD system is used with trimethylaluminum (TMA) and water as precursors to deposit uniform aluminum oxide thin films. Aluminum oxide thin films were deposited on the crystalline silicon substrates as the deposition temperature varied from 50 to 250o C to study the effects of deposition temperature on the deposition rate per ALD cycle. The presence of aluminum oxide was confirmed with energy dispersive spectroscopy. Measurement of film thickness was performed using ellipsometry. On the anodized aluminum substrates, that have pores formed spontaneously during the anodizing process, the deposition temperature was kept at 250o C while th