Low temperature silicon dioxide by thermal （低温二氧化硅热）.pdf

JOURNAL OF APPLIED PHYSICS 107, 064314 2010 Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties D. Hiller,1,2,a R. Zierold,3 J. Bachmann,3,2 M. Alexe,2 Y. Yang,1,2 J. W. Gerlach,4 A. Stesmans,5 M. Jivanescu,5 U. Müller,6 J. Vogt,7 H. Hilmer,7 P. Löper,8 M. Künle,8 F. Munnik,9 K. Nielsch,3 and M. Zacharias1 1 Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany 2 Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany 3 Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, 20355 Hamburg, Germany 4 Leibniz Institute of Surface Modification (IOM), Permoserstrasse 15, 04318 Leipzig, Germany 5 Department of Physics, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium 6Swiss Federal Laboratories for Materials Testing and Research (EMPA), Überlandstrasse 129, CH-8600 Dübendorf, Switzerland 7 Faculty of Physics and Earth Sciences, University of Leipzig, Linnéstrasse 5, 04103 Leipzig, Germany 8 Fraunhofer ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany 9 Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstrasse 400, 01328 Dresden, Germany Received 17 December 2009; accepted 25 January 2010; published online 29 March 2010 SiO2 is the most widely used dielectric material but its growth or deposition involves high thermal