Low Temperature Polysilicon ThinFilm （低温多晶硅薄膜）.pdf

J. I. Han Low Temperature Polysilicon Thin-Film Transistors on Flexible Substrates Jeong-In Han* and Yong-Hoon Kim Information Display Research Center Korea Electronics Technology Institute Seongnam, Gyeonggi, Korea, 463-816 *hanji@keti.re.kr Abstract: We fabricated low-temperature Experimental polycrystalline silicon thin-film transistors (poly-Si The direct fabrication of poly-Si TFTs on a polymer TFTs) on flexible substrates using sputtered amorphous substrate causes severe problems during the device Si (a-Si) precursor films. The a-Si precursor films were fabrication process. In particular, significant amounts of deposited by using rf-magnetron sputtering system with stress are induced in the deposited inorganic layers due to argon-helium mixture gas to minimize the argon thermal expansion mismatch between the polymer incorporation into the Si film. The a-Si films were laser substrate and the inorganic layers [3]. This indeed annealed by using XeCl excimer laser and a four-mask- generates cracks in the inorganic layers, leading to failure processed poly-Si TFT was fabricated with fully self- of the transistor device. In order to minimize the stress aligned top gate structure. The fabricated pMOS TFT induced during the fabrication process