掺杂对氧化钛薄膜光学性能的影响-材料工程.PDF

15 Influences of CeO Doping on Optical 2 Properties of TiO2 Film 1, 2 2 , ( 1 , 710061; 2 , 710072) 1, 2 2 I Yun , WANG iu-ding ( 1 Xian Institute of Post T elecommunications, Xian 710069, China; 2 Northwestern Polytechnical University, Xian 710072, China) : TiO , T iO 2 2 CeO ; E 3.27eV 2.51eV, 2 g 380nm 495nm, : ; TiO ; CeO ; ; 2 2 : TB303 : A : 1001-4381(2008) 07-0015-03 Abstract: T iO2 thin film was successfully prepared with electron beam evaporation. The influences of refractive index, transmittance and band gap on doped TiO2 film were studied. The results indicate that adaptive Ce-doped improves the refractive index of TiO2 film; doping CeO2 makes band gap value reducing from 3. 27eV to 2. 5eV, resulting in the absorption edge shifting from 380nm to 495nm. In this way, more solar energy is utilized. Key words: electron beam evaporation; T iO2 film; doped- CeO2 ; refractive index; band gap , , CeO2 , , K9 , , 152, 360 ~ 1400nm [ 1] [ 2] 92% T iO2 CeO2 [ 3] , BS110S , , TP- 117 [ 4] U-3501 TiO2- , TiO2