肖特基二极管和普通二极管（Schottky diode and common diode）.docVIP

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肖特基二极管和普通二极管（Schottky diode and common diode）.doc

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肖特基二极管和普通二极管（Schottky diode and common diode）

肖特基二极管和普通二极管（Schottky diode and common diode） Q: what are the similarities and differences between common silicon diodes and Schottky diodes? Answer: two kinds of diodes are one-way conduction, can be used for rectification occasions. The pressure difference is ordinary silicon diode can be high, but its recovery rate is low, can only be used in the low frequency rectifier, if it is high because it will be unable to recover quickly and reverse leakage, resulting in serious heat pipe burned; Schottky diode resistance pressure can often lower, but its recovery speed that can be used in the application of high frequency switching power supply, so the rectifier diode as output, however, switching power supply rectifier temperature is very high. Answer: fast recovery diode refers to the reverse recovery time is very short diode (below 5us), the process is mostly gold doped measures, the structure has a PN junction structure, and some use improved PIN structure. Its forward voltage drop is higher than that of the common diode (1-2V), and the reverse voltage is below 1200V. Performance can be divided into two levels: fast recovery and super fast recovery. The reverse recovery time is several hundred nanoseconds or longer, while the latter is below 100 ns. Schottky diode is formed by metal and semiconductor diode contact barrier based, referred to as the Schottky diode (Schottky Barrier Diode), with a positive pressure to reduce the reverse recovery time (0.4--0.5V), short (10-40 NS), and the reverse leakage current is large, the pressure is low, generally less than 150V, used for low voltage applications. These two tubes are usually used for switching power supplies. Schottky diode and fast recovery diode difference: the former recovery time is about one hundred times smaller than the latter, the former reverse recovery time is about a few nanoseconds ~! The advantages of the former are low power consumption, high current, ultra high speed ~! The electrical characteristics